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CGH31240F Datasheet, Cree

CGH31240F hemt equivalent, gan hemt.

CGH31240F Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.84MB)

CGH31240F Datasheet
CGH31240F
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 1.84MB)

CGH31240F Datasheet

Features and benefits


* 2.7 - 3.1 GHz Operation
* 12 dB Power Gain
* 60 % Power Added Efficiency
* < 0.2 dB Pulsed Amplitude Droop Rev 2.0
  – May 2015 Subj.

Application

The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3414204200F1 Typical Performance Ove.

Description

RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 10.0pF, +/-5%, 250V, 0603, ATC600S CAP, 6.8pF, +/- 0.25 pF, 250V, 0603, ATC600S CAP, 470pF, +/-5%, 100V, 0603, X7R CAP, 33uF, 20%, G CASE CAP, 33000 pF, 0805, 100V, X7R CAP, 1..

Image gallery

CGH31240F Page 1 CGH31240F Page 2 CGH31240F Page 3

TAGS

CGH31240F
GaN
HEMT
Cree

Manufacturer


Cree

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