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CGH31240F Datasheet Preview

CGH31240F Datasheet

GaN HEMT

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CGH31240F
240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3414204200F1
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
Output Power
243 249 249 245
3.1 GHz
243
Gain
11.9
11.9
11.9
11.9
11.9
Power Added Efficiency
60
61
60
59
52
Note:
Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
Units
W
dB
%
Features
• 2.7 - 3.1 GHz Operation
• 12 dB Power Gain
• 60 % Power Added Efficiency
• < 0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1




Cree

CGH31240F Datasheet Preview

CGH31240F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Pulse Width
PW 1
Duty Cycle
DC 50
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IGMAX
IDMAX
TS
τ
120
-10, +2
345
-65, +150
225
60
24
245
40
Pulsed Thermal Resistance, Junction to Case3
RθJC
0.5
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH31240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 46.4
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics3 (TC = 25˚C, F0 = 2.7, 2.9, 3.1 GHz unless otherwise noted)
Output Power
POUT
200
Power Added Efficiency1 at 2.7 GHz
PAE 49
Power Added Efficiency2 at 2.9 GHz
PAE 52
Power Added Efficiency3 at 3.1 GHz
PAE 42
Power Gain
GP 11
Small Signal Gain
S21 14
Typ.
-3.0
-2.7
56.0
250
54
58
49
12
16
Input Return Loss
S11 – –12
Output Return Loss
S22 –6.0
Pulsed Amplitude Droop
D 0.15
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGH31240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%.
Max.
-2.3
–8.0
–4.5
Units
ms
%
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
30 seconds
Units
Conditions
VDC VDS = 10 V, ID = 57.6 mA
VDC VDS = 28 V, ID = 1.0 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 57.6 mA
W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
% VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
% VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
% VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
dB VDD = 28 V, IDQ = 1.0 A
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH31240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH31240F
Description GaN HEMT
Maker Cree
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