CGH31240F hemt equivalent, gan hemt.
* 2.7 - 3.1 GHz Operation
* 12 dB Power Gain
* 60 % Power Added Efficiency
* < 0.2 dB Pulsed Amplitude Droop
Rev 2.0
– May 2015
Subj.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3414204200F1
Typical Performance Ove.
RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 10.0pF, +/-5%, 250V, 0603, ATC600S CAP, 6.8pF, +/- 0.25 pF, 250V, 0603, ATC600S CAP, 470pF, +/-5%, 100V, 0603, X7R CAP, 33uF, 20%, G CASE CAP, 33000 pF, 0805, 100V, X7R CAP, 1..
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