Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Pulse Width
PW 1
Duty Cycle
DC 50
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IGMAX
IDMAX
TS
τ
120
-10, +2
345
-65, +150
225
60
24
245
40
Pulsed Thermal Resistance, Junction to Case3
RθJC
0.5
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH31240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%.
Electrical Characteristics (TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
–
Saturated Drain Current2
IDS 46.4
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics3 (TC = 25˚C, F0 = 2.7, 2.9, 3.1 GHz unless otherwise noted)
Output Power
POUT
200
Power Added Efficiency1 at 2.7 GHz
PAE 49
Power Added Efficiency2 at 2.9 GHz
PAE 52
Power Added Efficiency3 at 3.1 GHz
PAE 42
Power Gain
GP 11
Small Signal Gain
S21 14
Typ.
-3.0
-2.7
56.0
–
250
54
58
49
12
16
Input Return Loss
S11 – –12
Output Return Loss
S22 – –6.0
Pulsed Amplitude Droop
D – 0.15
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGH31240F-AMP. Pulse Width = 300 μS, Duty Cycle = 20%.
Max.
-2.3
–
–
–
–
–
–
–
–
–
–8.0
–4.5
–
Units
ms
%
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
30 seconds
Units
Conditions
VDC VDS = 10 V, ID = 57.6 mA
VDC VDS = 28 V, ID = 1.0 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 57.6 mA
W VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
% VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
% VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
% VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = 42 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
dB VDD = 28 V, IDQ = 1.0 A, PIN = -10 dBm
dB VDD = 28 V, IDQ = 1.0 A
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH31240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
