Description
The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications.
Features
- 2.7 - 3.1 GHz Operation.
- 12 dB Power Gain.
- 60% Power Added Efficiency.
- < 0.2 dB Pulsed Amplitude Droop
Large Signal Models Available for ADS and MWO
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Rev. 2.2, 2022-11-11
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CGH31240F Datasheet
