Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IGMAX
IMAX
TS
τ
84
-10, +2
28
-65, +150
225
15
6
245
80
Thermal Resistance, Junction to Case3
RθJC
2.8
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH35060F1 at PDISS = 28 W.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0 –2.3
VDC VDS = 10 V, ID = 14.4 mA
Gate Quiescent Voltage
VGS(Q)
–
-3.0
–
VDC VDS = 28 V, ID = 250 mA
Saturated Drain Current
IDS
11.6
14.0
-
A VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics2,3 (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted)
Small Signal Gain
GSS 10
–
11.5
–
–
VDC VGS = -8 V, ID = 14.4 mA
dB VDD = 28 V, IDQ = 250 mA
Drain Efficiency4
Back-Off Error Vector Magnitude
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
η
EVM1
EVM2
VSWR
19
–
–
–
23 –
2.5 –
2.0 2.5
– 10:1
% VDD = 28 V, IDQ = 250 mA, PAVE = 8 W
%
VDD = 28 V, IDQ = 250 mA,
PAVE = 24 dBm
% VDD = 28 V, IDQ = 250 mA, PAVE = 8 W
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 250 mA
Input Capacitance
CGS – 19.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS – 5.9 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD – 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in the CGH35060F1-AMP test fixture.
3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4 Drain Efficiency = POUT / PDC.
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf
