• Part: CGH35060F1
  • Description: GaN HEMT
  • Manufacturer: Cree
  • Size: 2.51 MB
Download CGH35060F1 Datasheet PDF
Cree
CGH35060F1
Features - 3.3 - 3.6 GHz Operation - 60 W Peak Power Capability - 12 d B Small Signal Gain - 8.0 W PAVE at < 2.0 % EVM - 25 % Drain Efficiency at 8 W PAVE - Wi MAX Fixed Access 802.16-2004 OFDM - Wi MAX Mobile Access 802.16e OFDMA Rev 3.1 - February 2016 Subject to change without notice. .cree./rf Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS PDISS TSTG TJ IGMAX IMAX TS τ 84 -10, +2 28 -65, +150 225 15 6 245 80 Thermal Resistance, Junction to Case3 RθJC Case Operating Temperature3 TC -40, +150 Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at .cree./RF/Document-Library 3 Measured for the CGH35060F1 at PDISS = 28 W. Electrical Characteristics (TC =...