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CGH35060F1 Datasheet Preview

CGH35060F1 Datasheet

GaN HEMT

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CGH35060F1 / CGH35060P1
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and
BWA linear amplifier applications. The transistor is supplied in a ceramic/
metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable,
enabling even greater efficiency when used with digital pre-distortion (DPD).
PPNa: cCkGaHge35T0y6p0eF: 414&01C9G3H&354046001P916
Typical Performance Over 3.3-3.6GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
Small Signal Gain
11.7
12.2
12.6
3.6 GHz
12.8
EVM @ 26 dBm
2.05
1.82
1.56
1.80
EVM @ 39 dBm
1.91
1.83
1.98
2.86
Drain Efficiency @ 39 dBm
22.0
23.1
24.9
26.7
Input Return Loss
8.0
10.3
12.5
13.1
Note:
Measured in the CGH35060F1-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
%
%
dB
Features
• 3.3 - 3.6 GHz Operation
• 60 W Peak Power Capability
• 12 dB Small Signal Gain
• 8.0 W PAVE at < 2.0 % EVM
• 25 % Drain Efficiency at 8 W PAVE
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/rf
1




Cree

CGH35060F1 Datasheet Preview

CGH35060F1 Datasheet

GaN HEMT

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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IGMAX
IMAX
TS
τ
84
-10, +2
28
-65, +150
225
15
6
245
80
Thermal Resistance, Junction to Case3
RθJC
2.8
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH35060F1 at PDISS = 28 W.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0 –2.3
VDC VDS = 10 V, ID = 14.4 mA
Gate Quiescent Voltage
VGS(Q)
-3.0
VDC VDS = 28 V, ID = 250 mA
Saturated Drain Current
IDS
11.6
14.0
-
A VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR 120
RF Characteristics2,3 (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted)
Small Signal Gain
GSS 10
11.5
VDC VGS = -8 V, ID = 14.4 mA
dB VDD = 28 V, IDQ = 250 mA
Drain Efficiency4
Back-Off Error Vector Magnitude
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
η
EVM1
EVM2
VSWR
19
23
2.5
2.0 2.5
10:1
% VDD = 28 V, IDQ = 250 mA, PAVE = 8 W
%
VDD = 28 V, IDQ = 250 mA,
PAVE = 24 dBm
% VDD = 28 V, IDQ = 250 mA, PAVE = 8 W
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 250 mA
Input Capacitance
CGS 19.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 5.9 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in the CGH35060F1-AMP test fixture.
3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4 Drain Efficiency = POUT / PDC.
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf


Part Number CGH35060F1
Description GaN HEMT
Maker Cree
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