CGH35060F1 Description
The transistor is supplied in a ceramic/ metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD).
CGH35060F1 Key Features
- 3.6 GHz Operation
- 60 W Peak Power Capability
- 12 dB Small Signal Gain
- 8.0 W PAVE at < 2.0 % EVM
- 25 % Drain Efficiency at 8 W PAVE
- WiMAX Fixed Access 802.16-2004 OFDM
- WiMAX Mobile Access 802.16e OFDMA
- February 2016