• Part: CGH35030F
  • Description: GaN HEMT
  • Manufacturer: Cree
  • Size: 932.18 KB
Download CGH35030F Datasheet PDF
Cree
CGH35030F
CGH35030F is GaN HEMT manufactured by Cree.
Features - - - - 2007 Rev 1.4 - May - 3.9 GHz Operation >11 d B Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM Wi MAX Fixed Access 802.16-2004 OFDM - - Subject to change without notice. .cree./wireless Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Soldering Temperature Thermal Resistance, Junction to Case 1 Symbol VDSS VGS TSTG TJ TS RθJC Rating 84 -10, +2 -55, +150 175 245 3.7 Units Volts Volts ˚C ˚C ˚C ˚C/W 1 Measured for the CGH35030F at 14 W PDISS .. Note: Electrical Characteristics (TC = 25˚C) Characteristics DC Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage Forward Transconductance Case Operating Temperature Screw Torque RF Characteristics Small Signal Gain Drain Efficiency1 Back-Off Error Vector Magnitude Error Vector Magnitude Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance 2,3 VGS(th) VGS(Q) IDS VBR gm TC T -3.6 - 4.8 84 1200 -10 - -2.5 -2.6 5.4 100 1300 - - - - - +105 60 VDC VDC A VDC m S ˚C in-oz VDS = 10 V, ID = 7.2 m A VDS = 28 V, ID = 120 m A VDS = 6.0 V, VGS = 2 V VGS = -8 V, ID = 7.2 m A VDS = 28 V, ID = 2 A Reference 440166 Package Revision 3 (TC = 25˚C, F0 = 3.6 GHz unless otherwise noted)...