CGH35030F
CGH35030F is GaN HEMT manufactured by Cree.
Features
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2007 Rev 1.4
- May
- 3.9 GHz Operation >11 d B Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM Wi MAX Fixed Access 802.16-2004 OFDM
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Subject to change without notice. .cree./wireless
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Soldering Temperature Thermal Resistance, Junction to Case 1
Symbol VDSS VGS TSTG TJ TS RθJC
Rating 84 -10, +2 -55, +150 175 245 3.7
Units Volts Volts ˚C ˚C ˚C ˚C/W
1 Measured for the CGH35030F at 14 W PDISS ..
Note:
Electrical Characteristics (TC = 25˚C)
Characteristics DC Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage Forward Transconductance Case Operating Temperature Screw Torque RF Characteristics Small Signal Gain Drain Efficiency1 Back-Off Error Vector Magnitude Error Vector Magnitude Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance
2,3
VGS(th) VGS(Q) IDS VBR gm TC T
-3.6
- 4.8 84 1200 -10
- -2.5 -2.6 5.4 100 1300
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- +105 60
VDC VDC A VDC m S ˚C in-oz
VDS = 10 V, ID = 7.2 m A VDS = 28 V, ID = 120 m A VDS = 6.0 V, VGS = 2 V VGS = -8 V, ID = 7.2 m A VDS = 28 V, ID = 2 A
Reference 440166 Package Revision 3
(TC = 25˚C, F0 = 3.6 GHz unless otherwise noted)...