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CGH35030F - GaN HEMT

Datasheet Summary

Description

RES,1/16W,0603,1%,100 OHMS RES,1/16W,0603,1%,47 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.05pF, 0603 CAP, 0.7pF, +/-0.05pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 39pF, +/-5%, 0603 CAP,33000PF,

Features

  • 2007 Rev 1.4.
  • May 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain 2.0 % EVM at 4 W POUT 23 % Efficiency at 4 W POUT 3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM.
  • Subject to change without notice. www. cree. com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junc.

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Datasheet Details

Part number CGH35030F
Manufacturer Cree
File Size 932.18 KB
Description GaN HEMT
Datasheet download datasheet CGH35030F Datasheet
Additional preview pages of the CGH35030F datasheet.

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PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package. www.DataSheet4U.com Package Type : 440166 PN: CGH3503 0F Typical Performance Over 3.3-3.7GHz Parameter Small Signal Gain EVM @ 36 dBm Drain Efficiency @ 36 dBm Input Return Loss 3.3 GHz 10.9 1.9 20.8 11.4 11.1 1.9 20.8 8.2 (TC = 25˚C) of Demonstration Amplifier 3.6 GHz 10.7 2.0 22.7 4.0 3.7 GHz 10.8 2.0 23.9 3.7 Units dB % % dB 3.4 GHz 3.5 GHz 10.9 1.9 21.6 5.
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