900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cree

CGH35030F Datasheet Preview

CGH35030F Datasheet

GaN HEMT

No Preview Available !

PRELIMINARY
CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-
3.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
www.DataSheeitn4Ua.ccoemramic/metal flange package.
PackagPeNT:yCpGe:H3454003106F6
Typical Performance Over 3.3-3.7GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
Small Signal Gain
10.9
11.1
10.9
10.7
10.8
Units
dB
EVM @ 36 dBm
1.9 1.9 1.9 2.0 2.0
%
Drain Efficiency @ 36 dBm
20.8
20.8
21.6
22.7
23.9
%
Input Return Loss
11.4
8.2
5.3
4.0
3.7
dB
Note:
Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64
QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
3.3 - 3.9 GHz Operation
>11 dB Small Signal Gain
2.0 % EVM at 4 W POUT
23 % Efficiency at 4 W POUT
3.7˚C/W Typical thermal resistance under 4.0 W PAVE OFDM
WiMAX Fixed Access 802.16-2004 OFDM
Subject to change without notice.
www.cree.com/wireless





Cree

CGH35030F Datasheet Preview

CGH35030F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Soldering Temperature
Thermal Resistance, Junction to
Case 1
VDSS
VGS
TSTG
TJ
TS
RθJC
Note:
www.Data1ShMeeeat4sUu.croemd for the CGH35030F at 14 W PDISS
Electrical Characteristics (TC = 25˚C)
Rating
84
-10, +2
-55, +150
175
245
3.7
Units
Volts
Volts
˚C
˚C
˚C
˚C/W
Characteristics
DC Characteristics4
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.6
-2.5
VDC
VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage
VGS(Q)
-2.6
VDC
VDS = 28 V, ID = 120 mA
Saturated Drain Current
IDS 4.8 5.4
-
A VDS = 6.0 V, VGS = 2 V
Drain-Source Breakdown Voltage
VBR
84 100
VDC
VGS = -8 V, ID = 7.2 mA
Forward Transconductance
gm
1200
1300
mS VDS = 28 V, ID = 2 A
Case Operating Temperature
TC -10
-
+105
˚C
Screw Torque
T
-
-
60
in-oz
Reference 440166 Package Revision 3
RF Characteristics2,3 (TC = 25˚C, F0 = 3.6 GHz unless otherwise noted)
Small Signal Gain
GSS
10.0
10.7
-
dB VDD = 28 V, IDQ = 120 mA
Drain Efficiency1
Back-Off Error Vector Magnitude
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
η
EVM1
EVM2
VSWR
20.0
-
22.5
2.3
2.0
TBD
-
% VDD = 28 V, IDQ = 120 mA, PAVE = 4 W
%
VPADVDE
=
=
28
21
Vd,BImDQ
=
120
mA,
VDD = 28 V, IDQ = 120 mA, PAVE = 4 W
Y
No damage at all phase angles,
VDD = 28 V, IDQ = 120 mA
Input Capacitance
CGS 9.3
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 2.0
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.9
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Drain Efficiency = POUT / PDC
2 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding
Type RS-CC, Coding Rate Type 2/3.
3 Measured in the CGH35030F test fixture.
4 Measured on wafer prior to packaging.
Copyright © 2005-2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
 CGH35030F Rev 1.4 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless


Part Number CGH35030F
Description GaN HEMT
Maker Cree
PDF Download

CGH35030F Datasheet PDF






Similar Datasheet

1 CGH35030F GaN HEMT
Cree





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy