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CGH35015 - GaN HEMT

Description

Wolfspeed’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for 802.16-2004 WiMAX Fixed Access applications.

Features

  • 3.3 - 3.9 GHz Operation.
  • 15 W Peak Power Capability.
  • 12 dB Small Signal Gain.
  • 2.0 W PAVE at < 2.0% EVM.
  • 26% Efficiency at 2 W Average Power.
  • WiMAX Fixed Access 802.16-2004 OFDM.
  • WiMAX Mobile Access 802.16e OFDMA Large Signal Models Available for ADS and MWO Rev. 4.2, 2022-10-28 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed  and the Wolfstreak logo are register.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH35015 15 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX Description Wolfspeed’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9 GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Package Types: 440166 and 440196 PNs: CGH35015F and CGH35015P Typical Performance Over 3.3-3.8 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Small Signal Gain EVM at PAVE = 24 dBm EVM at PAVE = 33 dBm Drain Efficiency at PAVE = 33 dBm 3.3 GHz 13.6 2.71 2.63 24.0 3.4 GHz 12.8 2.31 2.29 25.5 3.5 GHz 12.3 2.1 1.
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