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CGH35015 Datasheet Preview

CGH35015 Datasheet

GaN HEMT

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CGH35015
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed
specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities, which makes the
CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The
transistor is available in both screw-down, flange and solder-down, pill packages.
PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd3454001159P6
Typical Performance Over 3.3-3.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
Small Signal Gain
13.6
12.8
12.3
12.2
12.3
3.8 GHz
12.8
EVM at PAVE = 24 dBm
2.71
2.31
2.1
2.12
2.54
3.04
EVM at PAVE = 33 dBm
2.63
2.29
1.93
1.70
1.70
2.14
Drain Efficiency at PAVE = 33 dBm
24.0
25.5
26.1
25.6
23.8
2.38
Note:
Measured in the CGH35015F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
dBm
dBm
%
Features
• 3.3 - 3.9 GHz Operation
• 15 W Peak Power Capability
• 12 dB Small Signal Gain
• 2.0 W PAVE at < 2.0 % EVM
• 26 % Efficiency at 2 W Average Power
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/wireless
1




Cree

CGH35015 Datasheet Preview

CGH35015 Datasheet

GaN HEMT

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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
PDISS
TSTG
TJ
IGMAX
IDMAX
TS
τ
84
-10, +2
7
-65, +150
225
4.0
1.5
245
60
Thermal Resistance, Junction to Case3
RθJC
8.0
Case Operating Temperature3
TC -40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGH35015F at PDISS = 7 W.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage
VGS(Q)
-2.7
VDC VDS = 28 V, ID = 60 mA
Saturated Drain Current
IDS 2.9 3.5
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
V(BR)DSS
120
VDC VGS = -8 V, ID = 3.6 mA
RF Characteristics2,3 (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted)
Small Signal Gain
GSS 10.5 12 dB VDD = 28 V, IDQ = 100 mA
Drain Efficiency4
Back-Off Error Vector Magnitude
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
η
EVM1
EVM2
VSWR
22
26
2.5
2.5
10 : 1
% VDD = 28 V, IDQ = 100 mA, PAVE = 2.0 W
%
VDD = 28 V, IDQ = 100 mA,
PAVE = 18 dBm
% VDD = 28 V, IDQ = 100 mA, PAVE = 2.0 W
No damage at all phase angles,
Y VDD = 28 V, IDQ = 100 mA,
PAVE = 2.0 W
Input Capacitance
CGS 4.5 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 1.3 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.2 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in the CGH35015F-AMP test fixture.
3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4 Drain Efficiency = POUT / PDC.
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CGH35015
Description GaN HEMT
Maker Cree
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CGH35015 Datasheet PDF






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