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CGH35015 - GaN HEMT

Description

CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S CAP, 10.0pF, +/-5%, 0603, ATC 600S CAP, 39 PF±5%, 0603, ATC 600S CAP, 100 PF±5%, 0603, ATC 600S CAP, 470 PF ±10%,100 V, 0603 CAP, 33000PF, 100V, 0805, X7R CAP, 10UF, 16V, SMT, TANTALUM (240096) CAP, 1.0UF ±10%, 100V, 1210, X7R

Features

  • 3.3 - 3.9 GHz Operation.
  • 15 W Peak Power Capability.
  • 12 dB Small Signal Gain.
  • 2.0 W PAVE at < 2.0 % EVM.
  • 26 % Efficiency at 2 W Average Power.
  • WiMAX Fixed Access 802.16-2004 OFDM.
  • WiMAX Mobile Access 802.16e OFDMA Rev 4.0.
  • May 2015 Subject to change without notice. www. cree. com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-.

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Datasheet Details

Part number CGH35015
Manufacturer Cree
File Size 788.15 KB
Description GaN HEMT
Datasheet download datasheet CGH35015 Datasheet
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CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd3454001159P6 Typical Performance Over 3.3-3.8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.3 GHz 3.4 GHz 3.5 GHz 3.6 GHz 3.7 GHz Small Signal Gain 13.6 12.8 12.3 12.2 12.3 3.8 GHz 12.8 EVM at PAVE = 24 dBm 2.71 2.31 2.1 2.12 2.54 3.04 EVM at PAVE = 33 dBm 2.63 2.29 1.93 1.
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