Overview: CGH35015
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd3454001159P6 Typical Performance Over 3.3-3.8GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.3 GHz 3.4 GHz 3.5 GHz 3.6 GHz 3.7 GHz Small Signal Gain 13.6 12.8 12.3 12.2 12.3 3.8 GHz 12.8 EVM at PAVE = 24 dBm 2.71 2.31 2.1 2.12 2.54 3.04 EVM at PAVE = 33 dBm 2.63 2.29 1.93 1.70 1.70 2.14 Drain Efficiency at PAVE = 33 dBm 24.0 25.5 26.1 25.6 23.8 2.38 Note: Measured in the CGH35015F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
