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CGH35015F - GaN HEMT

General Description

CAP, 0.7pF, +/-0.1 pF, 0603, ATC 600S CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S CAP, 10.0pF, +/-5%, 0603, ATC 600S CAP, 39 PF±5%, 0603, ATC 600S CAP, 100 PF±5%, 0603, ATC 600S CAP, 470 PF ±10%,100 V, 0603 CAP, 33000PF, 100V, 0805, X7R CAP, 10UF, 16V, SMT, TANTALUM (24

Key Features

  • ch 2007 Rev 1.6.
  • Mar 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 24 % Efficiency at 2.0 W POUT 15 W Typical P3dB WiMAX Fixed Access 802.16-2004 OFDM.
  • Subject to change without notice. www. cree. com/wireless  Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Thermal Resist.

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Part Number Description
CGH35015 GaN HEMT
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Full PDF Text Transcription (Reference)

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PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is available in a www.DataSheet4U.com flange package. Package Type : 440166 PN: CGH3501 5F Typical Performance 3.4-3.9GHz (TC = 25˚C) Parameter Gain @ POUT = 2 W POUT @ 2.0 % EVM Drain Efficiency @ 2.0 % EVM Input Return Loss 3.4 GHz 11.6 33.0 23.0 4.0 3.5 GHz 11.8 33.0 23.0 4.5 3.6 GHz 12.0 33.0 24.0 6.0 3.8 GHz 11.8 33.5 18.0 13.0 3.9 GHz 11.2 33.5 17.0 9.