CGH35015F datasheet, hemt equivalent, Cree

Features and benefits

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* ch 2007 Rev 1.6
– Mar 3.3 - 3.9 GHz Operation >11 dB Small Signal Gain >2.0 W POUT at 2.0 % EVM 24 % Efficiency at 2.0 W PO.

Application

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9.

Description

CAP, 0.7pF, +/-0.1 pF, 0603, ATC 600S CAP, 0.8pF, +/-0.1 pF, 0603, ATC 600S CAP, 2.4pF,+/-0.1pF, 0603, ATC 600S CAP, 10.0pF, +/-5%, 0603, ATC 600S CAP, 39 PF±5%, 0603, ATC 600S CAP, 100 PF±5%, 0603, ATC 600S CAP, 470 PF ±10%,100 V, 0603 CAP, 33000PF,.

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