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CGH35015F Datasheet Preview

CGH35015F Datasheet

GaN HEMT

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PRELIMINARY
CGH35015F
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility
transistor designed specifically for 802.16-2004 WiMAX Fixed Access
applications. GaN HEMTs offer high efficiency, high gain and wide
bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz
www.DataSheeWt4UiM.cAomX and BWA amplifier applications. The transistor is available in a
flange package.
PackagPeNT:yCpGe:H3454001156F6
Typical Performance 3.4-3.9GHz (TC = 25˚C)
Parameter
Gain @ POUT = 2 W
POUT @ 2.0 % EVM
Drain Efficiency @ 2.0 % EVM
3.4 GHz
11.6
33.0
23.0
3.5 GHz
11.8
33.0
23.0
3.6 GHz
12.0
33.0
24.0
3.8 GHz
11.8
33.5
18.0
3.9 GHz
11.2
33.5
17.0
Units
dB
dBm
%
Input Return Loss
4.0 4.5 6.0 13.0 9.0
dB
Note:
Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64
QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
3.3 - 3.9 GHz Operation
>11 dB Small Signal Gain
>2.0 W POUT at 2.0 % EVM
24 % Efficiency at 2.0 W POUT
15 W Typical P3dB
WiMAX Fixed Access 802.16-2004 OFDM
Subject to change without notice.
www.cree.com/wireless





Cree

CGH35015F Datasheet Preview

CGH35015F Datasheet

GaN HEMT

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Thermal Resistance, Junction to
Case 1
VDSS
VGS
TSTG
TJ
RθJC
Note:
1 Measured for the CGH35015F at PDISS = 14W.
www.DataSheet4U.com
Electrical Characteristics (TC = 25˚C)
Rating
84
-10, +2
-55, +150
175
5.0
Units
Volts
Volts
˚C
˚C
˚C/W
Characteristics
DC Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.0
-2.5
-1.8
VDC
VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage
VGS(Q)
-2.4
VDC
VDS = 28 V, ID = 60 mA
Saturated Drain Current
IDS 2.4 2.7
A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
V(BR)DSS
84
100
VDC
VGS = -8 V, ID = 3.6 mA
Case Operating Temperature
TC
-10
+105
˚C
Screw Torque
T
60
in-oz
Reference 440166 Package Revision 3
RF Characteristics2,3 (TC = 25˚C, F0 = 3.5 GHz unless otherwise noted)
Small Signal Gain
GSS 11 12
-
dB VDD = 28 V, IDQ = 60 mA
Drain Efficiency1
η 22 24 % VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W
Back-Off Error Vector Magnitude
EVM1
2.5
-
% VDD = 28 V, IDQ = 60 mA, PAVE = 18 dBm
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
EVM2
2.0
-
VSWR - 10 : 1 -
% VDD = 28 V, IDQ = 60 mA, PAVE = 2.0 W
No damage at all phase angles,
Y
VPADVDE
=
=
228.0VW, IDQ
=
60
mA,
Input Capacitance
CGS 5.00
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
CDS 1.32
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance
CGD 0.43
pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Drain Efficiency = POUT / PDC
2 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of
59, Coding Type RS-CC, Coding Rate Type 2/3.
3 Measured in the CGH35015F-TB test fixture.
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
 CGH35015F Rev 1.6 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/wireless


Part Number CGH35015F
Description GaN HEMT
Maker Cree
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CGH35015F Datasheet PDF






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