KHB4D5N60F2 transistor equivalent, n channel mos field effect transistor.
VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.) =17nC
MAXIMUM RATING (Tc=25 )
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KHB4D5N60F UNIT
KH.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
FEATURES VDSS(Min.)= 600V, ID= 4.5.
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