KHB4D0N80F2
KHB4D0N80F2 is N CHANNEL MOS FIELD EFFECT TRANSISTOR manufactured by KEC.
- Part of the KHB4D0N80P1 comparator family.
- Part of the KHB4D0N80P1 comparator family.
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.
Features
VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC
KHB4D0N80P1/F1/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB4D0N80P1
1. GATE 2. DRAIN 3. SOURCE
DIM A B C D E F G H I J K L M N O P Q
MILLIMETERS 9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05 0.8 +_ 0.1 3.6 +_ 0.2 2.8 +_ 0.1 3.7
0.5+0.1/-0.05
1.5 13.08 +_ 0.3
1.4 +_ 0.1 1.27 +_...
