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KHB4D0N80F2, KHB4D0N80P1 Datasheet - KEC

KHB4D0N80F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR

KHB4D0N80F2 Features

* VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3

KHB4D0N80F2, KHB4D0N80P1 Datasheet

This datasheet PDF includes multiple part numbers: KHB4D0N80F2, KHB4D0N80P1. Please refer to the document for exact specifications by model.
KHB4D0N80F2 Datasheet Preview Page 2 KHB4D0N80F2 Datasheet Preview Page 3

Datasheet Details

Part number:

KHB4D0N80F2, KHB4D0N80P1

Manufacturer:

KEC

File Size:

500.08 KB

Description:

N channel mos field effect transistor.

This datasheet PDF includes multiple part numbers: KHB4D0N80F2, KHB4D0N80P1.
Please refer to the document for exact specifications by model.

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KHB4D0N80F2 KHB4D0N80P1 CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

KHB4D0N80F2 Distributor