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KHB4D0N65F Datasheet, KEC

KHB4D0N65F transistor equivalent, n channel mos field effect transistor.

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KHB4D0N65F Datasheet

Features and benefits

VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D0N65P KHB4D0N65F .

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES VDSS=650V, ID=4A Drain-Sourc.

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KHB4D0N65F Page 1 KHB4D0N65F Page 2 KHB4D0N65F Page 3

TAGS

KHB4D0N65F
CHANNEL
MOS
FIELD
EFFECT
TRANSISTOR
KEC

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