KHB4D5N60P transistor equivalent, n channel mos field effect transistor.
VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.) =17nC
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KHB4D5N60P KH.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
FEATURES VDSS(Min.)= 600V, ID= 4.5.
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