KHB4D5N60F Features
* VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.) =17nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D5N60P KHB4D5N60F Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (N
KHB4D5N60F, KHB4D5N60P Datasheet
Datasheet Details
KHB4D5N60F, KHB4D5N60P
KEC
492.23 KB
N channel mos field effect transistor.
This datasheet PDF includes multiple part numbers: KHB4D5N60F, KHB4D5N60P.
Please refer to the document for exact specifications by model.
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