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KHB4D5N60F Datasheet, KEC

KHB4D5N60F transistor equivalent, n channel mos field effect transistor.

KHB4D5N60F Avg. rating / M : 1.0 rating-11

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KHB4D5N60F Datasheet

Features and benefits

VDSS(Min.)= 600V, ID= 4.5A Drain-Source ON Resistance : RDS(ON)=2.5 @VGS =10V Qg(typ.) =17nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D5N60P KH.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 4.5.

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KHB4D5N60F Page 1 KHB4D5N60F Page 2 KHB4D5N60F Page 3

TAGS

KHB4D5N60F
CHANNEL
MOS
FIELD
EFFECT
TRANSISTOR
KHB4D5N60F2
KHB4D5N60P
KHB4D0N65F
KEC

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