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KHB4D0N80F1 Datasheet, KEC

KHB4D0N80F1 transistor equivalent, n channel mos field effect transistor.

KHB4D0N80F1 Avg. rating / M : 1.0 rating-11

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KHB4D0N80F1 Datasheet

Features and benefits

VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ.)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN .

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=.

Image gallery

KHB4D0N80F1 Page 1 KHB4D0N80F1 Page 2 KHB4D0N80F1 Page 3

TAGS

KHB4D0N80F1
CHANNEL
MOS
FIELD
EFFECT
TRANSISTOR
KEC

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