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KHB4D0N80F1 Datasheet N Channel Mos Field Effect Transistor

Manufacturer: KEC

Overview: SEMICONDUCTOR TECHNICAL DATA General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switch mode power supplies.

Key Features

  • VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.6 @VGS = 10V Qg(typ. )=25nC KHB4D0N80P1/F1/F2 N.

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