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KHB4D0N65P - N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for switch mode power supplies.

Key Features

  • VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ. )=20nC.

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Datasheet Details

Part number KHB4D0N65P
Manufacturer KEC
File Size 393.03 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB4D0N65P Datasheet

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SEMICONDUCTOR TECHNICAL DATA KHB4D0N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D0N65P KHB4D0N65F Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD 650 30 4.0 4.0* 16 16* 260 10.