PTFA192001E fet equivalent, thermally-enhanced high power rf ldmos fet.
include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.
from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earle.
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flange.
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