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PTFA190451F Datasheet, Infineon Technologies

PTFA190451F fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA190451F Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 386.25KB)

PTFA190451F Datasheet
PTFA190451F
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 386.25KB)

PTFA190451F Datasheet

Features and benefits


*
* Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0%.

Description

The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced package.

Image gallery

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TAGS

PTFA190451F
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon Technologies

Manufacturer


Infineon (https://www.infineon.com/) Technologies

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