PTFA181001E fet equivalent, thermally-enhanced high power rf ldmos fet.
include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.
in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless fla.
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufacture.
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