PTFA181001GL fet equivalent, thermally-enhanced high power rf ldmos fet.
include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.
in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages wi.
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flang.
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