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PTFA181001HL Datasheet, Infineon Technologies

PTFA181001HL fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA181001HL Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 335.49KB)

PTFA181001HL Datasheet
PTFA181001HL Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 335.49KB)

PTFA181001HL Datasheet

Features and benefits

include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.

Application

in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages wi.

Description

The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flang.

Image gallery

PTFA181001HL Page 1 PTFA181001HL Page 2 PTFA181001HL Page 3

TAGS

PTFA181001HL
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon Technologies

Manufacturer


Infineon (https://www.infineon.com/) Technologies

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