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PTFA182001E Datasheet, Infineon Technologies

PTFA182001E fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA182001E Avg. rating / M : 1.0 rating-13

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PTFA182001E Datasheet

Features and benefits

include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS process, this device pro.

Application

from 1805 to 1880 MHz. Features include input and output matching, and thermally-enhanced single-ended package with a sl.

Description

The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS p.

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TAGS

PTFA182001E
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon Technologies

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