Datasheet Details
| Part number | PTFA182001E |
|---|---|
| Manufacturer | Infineon |
| File Size | 271.73 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTFA182001E Datasheet
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General Description
The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz.
Key Features
- include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA182001E Package H-30260-2 2-Tone Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz -25 45 Features.
- Drain Efficiency (%) Pb-free, RoHS-compliant and thermally-enhanced package Broadband internal matching Typical.