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PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET

Download the PTFA180701F datasheet PDF. This datasheet also covers the PTFA180701E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band.

Features

  • include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2 EDGE EVM Performance VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz 5 50 Features.
  • 40 Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical EDGE p.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA180701E_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA180701F
Manufacturer Infineon
File Size 379.16 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA180701F Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFA180701E Thermally-Enhanced High Power RF LDMOS FET
PTFA181001E Thermally-Enhanced High Power RF LDMOS FET
PTFA181001F Thermally-Enhanced High Power RF LDMOS FET
PTFA181001GL Thermally-Enhanced High Power RF LDMOS FET
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Full PDF Text Transcription

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PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2 EDGE EVM Performance VDD = 28 V, IDQ = 550 mA, ƒ = 1836.
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