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PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET

Download the PTFA181001F datasheet PDF. This datasheet also covers the PTFA181001E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band.

Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 Features.
  • Thermally-enhanced packages Broadband i.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA181001E_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA181001F
Manufacturer Infineon
File Size 418.90 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA181001F Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFA181001E Thermally-Enhanced High Power RF LDMOS FET
PTFA181001GL Thermally-Enhanced High Power RF LDMOS FET
PTFA181001HL Thermally-Enhanced High Power RF LDMOS FET
PTFA180701E Thermally-Enhanced High Power RF LDMOS FET
PTFA180701F Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription

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PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 Features • • • Thermally-enhanced packages Broadband internal matching Typical EDGE performance at 1879.
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