Datasheet4U Logo Datasheet4U.com

PTFA181001HL - Thermally-Enhanced High Power RF LDMOS FET

Download the PTFA181001HL datasheet PDF. This datasheet also covers the PTFA181001GL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band.

Features

  • include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL.
  • Package PG-63248-2 PTFA181001HL.
  • Package PG-64248-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -30 35 Features.
  • Thermally-enhanced, plastic open-cavity (EPOC™.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA181001GL_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA181001HL
Manufacturer Infineon
File Size 335.49 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA181001HL Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTFA Plug Type Fixed Attenuator OPLINK
PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs Infineon
PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs Infineon
PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs Infineon
PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs Infineon

Other Datasheets by Infineon

Part Number Description
PTFA181001E Thermally-Enhanced High Power RF LDMOS FET
PTFA181001F Thermally-Enhanced High Power RF LDMOS FET
PTFA181001GL Thermally-Enhanced High Power RF LDMOS FET
PTFA180701E Thermally-Enhanced High Power RF LDMOS FET
PTFA180701F Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription

Click to expand full text
Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
Published: |