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PTFA181001GL - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band.

Features

  • include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL.
  • Package PG-63248-2 PTFA181001HL.
  • Package PG-64248-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -30 35 Features.
  • Thermally-enhanced, plastic open-cavity (EPOC™.

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Datasheet Details

Part number PTFA181001GL
Manufacturer Infineon
File Size 335.49 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA181001GL Datasheet

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Full PDF Text Transcription

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Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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