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PTFA041501F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA041501F datasheet PDF. This datasheet also covers the PTFA041501E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

They are available in thermally-enhanced ceramic open-cavity packages .

Features

  • Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P.
  • 1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Pb-free and RoHS-compliant Adjacent Channel Power Ratio (dB) 30 25 20 15.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA041501E_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA041501F
Manufacturer Infineon
File Size 457.87 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA041501F Datasheet

Full PDF Text Transcription

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PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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