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PTFA043002E - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz.

The thermally-enhanced package provides the coolest operation available.

Features

  • Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.55 A, 0 -10 -20.
  • 45 40 Thermally-enhanced package Broadband internal matching Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB - Adjacent <.
  • 33 dBc Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability Low HCI drift Pb-free and RoHS compliant Capable of handling 5:1 VSWR at 32 V, 300 W (CW) output power ƒ 1 = 799.5 MHz, ƒ 2 = 800.5 MHz E.

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Datasheet Details

Part number PTFA043002E
Manufacturer Infineon
File Size 326.08 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA043002E Datasheet

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Full PDF Text Transcription

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PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA043002E Package H-30275-4 Features Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.
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