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PTFA041501HL - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA041501HL datasheet PDF. This datasheet also covers the PTFA041501GL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

They are available in thermally-enhanced plastic open-cavity packages with copper flanges.

Features

  • 45 Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P.
  • 1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA041501GL_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA041501HL
Manufacturer Infineon
File Size 445.02 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA041501HL Datasheet

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Other Datasheets by Infineon

Part Number Description
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PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs
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Full PDF Text Transcription

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PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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