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PTFA180701E Datasheet, Infineon Technologies

PTFA180701E fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA180701E Avg. rating / M : 1.0 rating-12

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PTFA180701E Datasheet

Features and benefits

include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices prov.

Application

in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotte.

Description

The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless fla.

Image gallery

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TAGS

PTFA180701E
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon Technologies

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