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PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band.

Features

  • include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA142401EL Package H-33288-2 PTFA142401FL Package H-34288-2 DVB-T Drive-up VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW ACPR = 1475+/-4.3 MHz delta marker, 30 kHz RBW Adjacent Channel Power Ratio (dB) -25 40 Features.

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Datasheet Details

Part number PTFA142401EL
Manufacturer Infineon
File Size 460.71 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA142401EL Datasheet

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Full PDF Text Transcription

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PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz www.DataSheet4U.net Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA142401EL Package H-33288-2 PTFA142401FL Package H-34288-2 DVB-T Drive-up VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz, DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW ACPR = 1475+/-4.
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