• Part: PTFA142401EL
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 460.71 KB
Download PTFA142401EL Datasheet PDF
Infineon
PTFA142401EL
PTFA142401EL is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 - 1500 MHz ..net Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz frequency band. Features include internal I/O matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA142401EL Package H-33288-2 PTFA142401FL Package H-34288-2 DVB-T Drive-up VDD = 30 V, IDQ = 2000 m A, ƒ = 1475 MHz, DVB-T signal, PAR = 9.65 d B at 0.01%, 8 MHz BW ACPR = 1475+/-4.3 MHz delta marker, 30 k Hz RBW Adjacent Channel Power Ratio (d B) -25 40 Features - - - Drain Efficiency (%) Pb-free, Ro HS-pliant and thermally-enhanced packages with less than 0.25 micron Au plating Broadband internal matching Typical DVB-T performance at 1475 MHz, 30 V - Average output power = 47.0 d Bm - Linear Gain = 16.0 d B - Efficiency = 27.5% - Adjacent channel power = - 32 d Bc Typical CW performance, 1475 MHz, 30 V - Output power at P- 1d B = 240 W - Efficiency = 52% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 200 W (CW) output power Efficiency -30 30 -35 - -40 ACPR Hi ACPR Low - - - -45 42 43 44 45 46 47 48 49 Average Output Power (d...