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PTFA191001E Datasheet, Infineon Technologies

PTFA191001E fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA191001E Avg. rating / M : 1.0 rating-11

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PTFA191001E Datasheet

Features and benefits


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* Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 .

Application

They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging pr.

Description

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enh.

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TAGS

PTFA191001E
Thermally-Enhanced
High
Power
LDMOS
FET
PTFA191001F
PTFA190451E
PTFA190451F
Infineon Technologies

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