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PTFA043002E - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz.

The thermally-enhanced package provides the coolest operation available.

Features

  • Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.55 A, 0 -10 -20.
  • 45 40 Thermally-enhanced package Broadband internal matching Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB - Adjacent <.
  • 33 dBc Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability Low HCI drift Pb-free and RoHS compliant Capable of handling 5:1 VSWR at 32 V, 300 W (CW) output power ƒ 1 = 799.5 MHz, ƒ 2 = 800.5 MHz E.

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Datasheet Details

Part number PTFA043002E
Manufacturer Infineon
File Size 326.08 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA043002E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA043002E Package H-30275-4 Features Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.
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