• Part: PTFA070601E
  • Description: Thermally-Enhanced High Power RF LDMOS FETs
  • Manufacturer: Infineon
  • Size: 276.62 KB
Download PTFA070601E Datasheet PDF
Infineon
PTFA070601E
Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band. Features include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA070601E Package H-36265-2 PTFA070601F Package H-37265-2 2-Carrier WCDMA Performance VDD = 28 V, IDQ = 600 m A, ƒ = 760 MHz, 3GPP WCDMA s ignal, P/A R = 8 d B, 10 MHz carrier spacing -25 -30 55 50 Features - - Broadband internal matching Typical WCDMA performance, 760 MHz, 28 V - Average output power = 12 W - Gain = 19 d B - Efficiency = 29% Typical CW performance, 760 MHz, 28 V - Output power at P- 1d B = 60 W - Gain = 19 d B - Efficiency = 72% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power Pb-free...