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PTFA070601F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA070601F datasheet PDF. This datasheet also covers the PTFA070601E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band.

Features

  • include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA070601E Package H-36265-2 PTFA070601F Package H-37265-2 2-Carrier WCDMA Performance VDD = 28 V, IDQ = 600 m A, ƒ = 760 MHz, 3GPP WCDMA s ignal, P/A R = 8 dB, 10 MHz carrier spacing -25 -30 55 50 Features.
  • Broadband internal matching Typical WCDMA performa.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA070601E_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA070601F
Manufacturer Infineon
File Size 276.62 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA070601F Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFA070601E Thermally-Enhanced High Power RF LDMOS FETs
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Full PDF Text Transcription

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PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band. Features include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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