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PTFA071701E - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band.

Features

  • include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E.
  • Package H-36248-2 PTFA071701F.
  • Package H-37248-2 Two-tone Drive-up VDD = 30 V, IDQ = 900 mA, ƒ = 765 MHz, tone spacing = 1 MHz -20 60 55 Features.
  • Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadb.

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Datasheet Details

Part number PTFA071701E
Manufacturer Infineon
File Size 278.36 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA071701E Datasheet

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Full PDF Text Transcription

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PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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