Datasheet4U Logo Datasheet4U.com

PTFA072401FL - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA072401FL datasheet PDF. This datasheet also covers the PTFA072401EL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band.

These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages.

Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion =.
  • 39 dBc Typical CW performance, 770 MHz, 30 V - Output power at P.
  • 1dB = 240 W - Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power Thermally-enha.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA072401EL_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA072401FL
Manufacturer Infineon
File Size 345.98 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA072401FL Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTFA080551E Thermally-Enhanced High Power RF LDMOS FETs Wolfspeed
PTFA080551F Thermally-Enhanced High Power RF LDMOS FETs Wolfspeed
PTFA Plug Type Fixed Attenuator OPLINK
PTFA142401EL Thermally-Enhanced High Power RF LDMOS FET Infineon Technologies
PTFA142401FL Thermally-Enhanced High Power RF LDMOS FET Infineon Technologies

Other Datasheets by Infineon

Part Number Description
PTFA072401EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601E Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601F Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701E Thermally-Enhanced High Power RF LDMOS FETs
PTFA071701F Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

Click to expand full text
PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA072401EL Package H-33288-2 PTFA072401FL Package H-34288-2 Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.
Published: |