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PTFA072401EL - Thermally-Enhanced High Power RF LDMOS FETs

Description

The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band.

These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages.

Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 770 MHz, 30 V - Average output power = 40 W - Linear Gain = 19 dB - Efficiency = 25% - Intermodulation distortion =.
  • 39 dBc Typical CW performance, 770 MHz, 30 V - Output power at P.
  • 1dB = 240 W - Efficiency = 58% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power Thermally-enha.

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Datasheet Details

Part number PTFA072401EL
Manufacturer Infineon
File Size 345.98 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA072401EL Datasheet

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Full PDF Text Transcription

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PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to 770 MHz frequency band. These devices feature internal I/O matching and thermally-enhanced, open-cavity ceramic packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA072401EL Package H-33288-2 PTFA072401FL Package H-34288-2 Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.
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