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PTFA081501E Datasheet, Infineon

PTFA081501E fets equivalent, thermally-enhanced high power rf ldmos fets.

PTFA081501E Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 278.83KB)

PTFA081501E Datasheet
PTFA081501E
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 278.83KB)

PTFA081501E Datasheet

Features and benefits


*
*
* Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at .

Application

They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the co.

Description

The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide.

Image gallery

PTFA081501E Page 1 PTFA081501E Page 2 PTFA081501E Page 3

TAGS

PTFA081501E
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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