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PTFA080551F Datasheet, Infineon

PTFA080551F fets equivalent, thermally-enhanced high power rf ldmos fets.

PTFA080551F Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 254.38KB)

PTFA080551F Datasheet
PTFA080551F
Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 254.38KB)

PTFA080551F Datasheet

Features and benefits

include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellen.

Application

in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flang.

Description

The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured wi.

Image gallery

PTFA080551F Page 1 PTFA080551F Page 2 PTFA080551F Page 3

TAGS

PTFA080551F
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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