PTFA080551E fets equivalent, thermally-enhanced high power rf ldmos fets.
include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellen.
in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flang.
The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured wi.
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