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PTFA071701F - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFA071701F datasheet PDF. This datasheet also covers the PTFA071701E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band.

Features

  • include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E.
  • Package H-36248-2 PTFA071701F.
  • Package H-37248-2 Two-tone Drive-up VDD = 30 V, IDQ = 900 mA, ƒ = 765 MHz, tone spacing = 1 MHz -20 60 55 Features.
  • Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadb.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA071701E_Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA071701F
Manufacturer Infineon
File Size 278.36 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFA071701F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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