GSM3415 datasheet, mosfet equivalent, Globaltech

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Features and benefits

* -20V/-4.9A,RDS(ON)=45mΩ@VGS=-4.5V
* -20V/-3.4A,RDS(ON)=58mΩ@VGS=-2.5V
* -20V/-2.2A,RDS(ON)=85mΩ@VGS=-1.8V
* Super high density cell design for extremely.

Application

Features
* -20V/-4.9A,RDS(ON)=45mΩ@VGS=-4.5V
* -20V/-3.4A,RDS(ON)=58mΩ@VGS=-2.5V
* -20V/-2.2A,RDS(ON)=85mΩ.

Description

GSM3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) ,low gate charge. These devices are particularly suited for low Voltage power management, such as smart Phone and notebook computer and other bat.

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