* -30V/-4.0A RDS(ON)=65mΩ@VGS=-10V
* -30V/-3.2A RDS(ON)=80mΩ@VGS=-4.5V
* -30V/-1.0A RDS(ON)=105mΩ@VGS=-2.5V
* Suit for -2.5V Gate Drive Applications Appli.

Features
* -30V/-4.0A RDS(ON)=65mΩ@VGS=-10V
* -30V/-3.2A RDS(ON)=80mΩ@VGS=-4.5V
* -30V/-1.0A RDS(ON)=105mΩ.

GSM3401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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