* 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available Applications
* MB /.

Features
* 30V, 12.6A, RDS(ON)=10mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS gu.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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