These P-Channel enhancement mode power field effectAtransistorsAareAusingAtrenchADMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provideAsuperiorAswitchingAperformance,Aand withstand high energy pulse in the avalanche and commutation mode.
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GSM3131JZF 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effectAtransistorsAareAusingAtrenchADMOS technology. This advanced techn...
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fectAtransistorsAareAusingAtrenchADMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provideAsuperiorAswitchingAperformance,Aand withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features ◼ -30V, -5A, RDS(ON)=32mΩ@VGS=10V ◼ Fast switching ◼ Suit for -4.5V Gate Drive Applications ◼ Green Device Available Applications ◼ Notebook ◼ Load Switch ◼ Battery Protection ◼ Hand-held Instruments GSM3131JZF Packages & Pin Assignments GSM3131JZF (SOT-23) Pin Description 1 Gate 2 Source 3 D
GSM3131JZF Datasheet
