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GSM3118JZF - 30V N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effectatransistorsaareausingatrenchaDMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provideasuperioraswitchingaperformance,aand withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 30V, 5.9A, RDS(ON)=24mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • SOT-23 package design.

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Datasheet Details

Part number GSM3118JZF
Manufacturer Globaltech
File Size 610.22 KB
Description 30V N-Channel MOSFETs
Datasheet download datasheet GSM3118JZF Datasheet

Full PDF Text Transcription for GSM3118JZF (Reference)

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GSM3118JZF 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effectatransistorsaareausingatrenchaDMOS technology. This advanced techn...

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fectatransistorsaareausingatrenchaDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provideasuperioraswitchingaperformance,aand withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features ◼ 30V, 5.9A, RDS(ON)=24mΩ@VGS=10V ◼ Improved dv/dt capability ◼ Fast switching ◼ Green Device Available ◼ SOT-23 package design Applications ◼ MB / VGA / Vcore ◼ Load Switch ◼ Hand-Held Instrument Packages & Pin Assignments GSM3118JZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain