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GSM3385ZF - 30V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V, -40A, RDS(ON).

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Datasheet Details

Part number GSM3385ZF
Manufacturer Globaltech
File Size 743.06 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet GSM3385ZF Datasheet

Full PDF Text Transcription for GSM3385ZF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSM3385ZF. For precise diagrams, and layout, please refer to the original PDF.

GSM3385ZF 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced techno...

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ect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features ◼ -30V, -40A, RDS(ON)<8.5mΩ@VGS=-10V ◼ Fast switching ◼ Suit for -4.

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