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GSM3401S - 30V P-Channel Enhancement Mode MOSFET

General Description

GSM3401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -30V/-4.0A RDS(ON)=65mΩ@VGS=-10V.
  • -30V/-3.2A RDS(ON)=80mΩ@VGS=-4.5V.
  • -30V/-1.0A RDS(ON)=105mΩ@VGS=-2.5V.
  • Suit for -2.5V Gate Drive.

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Datasheet Details

Part number GSM3401S
Manufacturer Globaltech
File Size 668.59 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet GSM3401S Datasheet

Full PDF Text Transcription for GSM3401S (Reference)

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GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description GSM3401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(O...

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ode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features  -30V/-4.0A RDS(ON)=65mΩ@VGS=-10V  -30V/-3.2A RDS(ON)=80mΩ@VGS=-4.5V  -30V/-1.0A RDS(ON)=105mΩ@VGS=-2.5V  Suit for -2.5V Gate Drive Applications Applications  Notebook  LED Display  DC-DC System  LCD Panel GSM3401S Packages & Pin Assignments GSM3401SZF(SOT-23) Pin Description 1 Gate 2 Source 3 Drain www.gs-power.

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