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GSM3406AS - N-Channel MOSFET

General Description

GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 30V/2.8A,RDS(ON)=45mΩ@VGS=10V.
  • 30V/2.4A,RDS(ON)=55mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • SOT-23 package design.

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Datasheet Details

Part number GSM3406AS
Manufacturer Globaltech
File Size 932.22 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM3406AS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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30V N-Channel Enhancement Mode MOSFET Product Description GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ 30V/2.8A,RDS(ON)=45mΩ@VGS=10V „ 30V/2.4A,RDS(ON)=55mΩ@VGS=4.5V „ Super high density cell design for extremely low RDS (ON) „ SOT-23 package design Applications „ Power Management in Note book „ LED Display „ DC-DC System „ LCD Panel Packages & Pin Assignments GSM3406ASJZF(SOT-23) GSM3406AS 1 Gate 2 Source 3 Drain Ordering Information GS P/N GSM3406AS P F Package Code Halogen Free/ Pb Free Code www.gs-power.