GSM3406AS Datasheet | Globaltech

30V N-Channel Enhancement Mode MOSFET Product Description GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features - 30V/2.8A,RDS(ON)=45mΩ@VGS=10V - 30V/2.4A,RDS(ON)=55mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - SOT-23 package design Applications - Power Management in Note book - LED Display - DC-DC System - LCD Panel Packages & Pin Assignments GSM3406ASJZF(SOT-23) 1 Gate 2 Source 3 Drain Ordering...