GSM3025S mosfet equivalent, n-channel mosfet.
* 30V/9.0A,RDS(ON)=32mΩ@VGS=10V
* 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V
* 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V
* Super high density cell design for extremely
low RDS (.
Features
* 30V/9.0A,RDS(ON)=32mΩ@VGS=10V
* 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V
* 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V.
GSM3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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