* 30V,054A,0RDS(ON)<6mΩ@VGS=10V
* High Power and current handing capability
* Lead Free and Green Devices Available
* DFN3x3-8L package design Application.

Features
* 30V,054A,0RDS(ON)<6mΩ@VGS=10V
* High Power and current handing capability
* Lead Free and Green.

These N-Channel enhancement mode power field effectatransistorsaareausingatrenchaDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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