* 30V,054A,0RDS(ON)<6mΩ@VGS=10V
* High Power and current handing capability
* Lead Free and Green Devices Available
* DFN3x3-8L package design Application.

Features
* 30V,054A,0RDS(ON)<6mΩ@VGS=10V
* High Power and current handing capability
* Lead Free and Green.

These N-Channel enhancement mode power field effectatransistorsaareausingatrenchaDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

GSM3112Z

GSM3118JZF

GSM3131JZF

GSM3025S

GSM3385ZF

GSM3401S

GSM3406AS

GSM3414S

GSM3415

GSM3611P

GSM3612P

GSM3909VP

GSM3911P

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts